Growth & Mechanisms of Rare-Earth-doped GaN Electrolumine...
Lee, Dong-Seon / Steckl, Andrew
Rare-earth (RE)-doped GaN has been shown to be an extremely versatile optoelectronic material, with light emission throughout the visible spectrum as well as at important near-infrared wavelengths. RE-doping of GaN has resulted in the successful fabrication of electroluminescent devices (ELD) with red, green and blue (RGB) color emissions using Eu, Er and Tm, respectively. Throughout studies with GaN:REs we have observed that RE optical emissi...