3 Ergebnisse.

Specimens of ZrB2 containing various concentrations of SiC, TaB2, and TaSi2 were pressureless-sintered and post-HIPed to theoretical densities. Oxidation resistances were studied by scanning thermogravimetry over the range 1150 - 1550 C, and isothermal thermogravimetry at 1200 - 1900 C. Most silicon-containing compositions formed a glassy surface layer, covering an interior oxide layer. This interior layer was less porous in tantalum-containin...

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In this book we investigate mechanism of charge carrier transport in organic semiconductor thin film devices (OTFDs). Numerical models for the current conduction in single layer OTFDs including both injection and bulk effect for both trap free organics as well as organics with traps exponentially distributed in energy are developed. The dependencies of the current density on the operation voltage, the thickness of the organic layer and the tra...