4 Ergebnisse.

This work incorporates the results of 41 years experience in ion implantation and 36 years in secondary ion mass spectrometry (SIMS). These two technologies became intertwined when the need became apparent for the measurement of depth distributions of elements implanted into many materials under many conditions during and after implantation, for which SIMS was ideally suited, and the realization that while SIMS was a powerful tool for this, SI...

This work incorporates the results of 41 years experience in ion implantation and 36 years in secondary ion mass spectrometry (SIMS). These two technologies became intertwined when the need became apparent for the measurement of depth distributions of elements implanted into many materials under many conditions during and after implantation, for which SIMS was ideally suited, and the realization that while SIMS was a powerful tool for this, SI...

This work incorporates the results of 41 years experience in ion implantation and 36 years in secondary ion mass spectrometry (SIMS). These two technologies became intertwined when the need became apparent for the measurement of depth distributions of elements implanted into many materials under many conditions during and after implantation, for which SIMS was ideally suited, and the realization that while SIMS was a powerful tool for this, SI...

ION IMPLANTATION AND SECONDARY ION MASS SPECTROMETRY TECHNOLOGIES... This work incorporates the results of 41 years experience in ion implantation and 36 years in secondary ion mass spectrometry (SIMS). These two technologies became intertwined when the need became apparent for the measurement of depth distributions of elements implanted into many materials under many conditions during and after implantation, for which SIMS was ideally suited,...