Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe and Si-C alloys.
Lieferbar
ISBN | 9781420066852 |
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Sprache | eng |
Cover | Fester Einband |
Verlag | Taylor and Francis |
Jahr | 20071213 |
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