Channel And Gate Engineered Double Gate MOSFET
De, Swapnadip / Chanda, Manash / Sarkar, Chandan Kumar
The shrinking of device dimension leads to reduction of gate oxide thickness. Because of this the undesirable hot electron effect and the gate tunneling current is increased. For Double gate MOSFETs, two gates control the potential barrier between the source and the drain terminals effectively, and the short channel effects can be suppressed. In DG structure, the electron current density corresponding to the two applied gate bias voltages (Vgs...