Thermal Oxidation is one of the most importantprocess steps in semiconductor fabrication to producehigh quality isolation layers. A chemical reactionconverts silicon into silicon dioxide which has morethan twice of the original volume. This is the mainsource for stress and displacements in the oxidizedstructure. Stress in copper interconnects can be essential forthe life time of an integrated circuit, because itcan support material transport and lead to voidformation. During the fabrication of sensors, where thin filmdeposition is often used, an intrinsic stress isgenerated in the layers which can cause unwanteddeformation in free standing structures. After an introduction the author describes theadvanced oxidation model and shows by means ofpictures the verified simulation results. A highlightof this book is the chapter about the Finite ElementMethod (FEM) which is used to solve the mathematicalformulation numerically. In a comprehensible way theauthor describes how to apply FEM in practice, sothat the reader of this book should be able todiscretize many other kinds of differential equationsand solve them with a computer, which is basic forsimulation.